Amorphous InSb and InAs0.3Sb0.7 for Long Wavelength Infrared Detection
نویسندگان
چکیده
Citation Zens, Timothy, Piotr Becla, Anuradha M. Agarwal, Lionel C. Kimerling, and Alvin Drehman. “Amorphous InSb and InAs[subscript 0.3]Sb[subscript 0.7] for long wavelength infrared detection.” In Infrared Technology and Applications XXXVII, edited by Bjørn F. Andresen, Gabor F. Fulop, and Paul R. Norton, 80123Y-80123Y-8. SPIE International Society for Optical Engineering, 2011. © (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).
منابع مشابه
Impressive Reduction of Dark Current in InSb Infrared Photodetector to achieve High Temperature Performance
Infrared photo detectors have vast and promising applications in military,industrial and other fields. In this paper, we present a method for improving theperformance of an infrared photodetector based on an InSb substance. To achieve goodperformance at high temperatures, thermal noise and intrusive currents should bereduced. For this purpose, a five-layer hetero structu...
متن کاملInSb arrays for IRAC (InfraRed Array Camera) on SIRTF (Space Infrared Telesope Facility)
SIRTF requires detector arrays with extremely high sensitivity, limited only by the background irradiance. Especially critical is the near infrared spectral region around 3 μm, where the detector current due to the zodiacal background is a minimum. IRAC has two near infrared detector channels centered at 3.6 and 4.5 μm. We have developed InSb arrays for these channels that operate with dark cur...
متن کاملTemperature-dependent refractive index measurements of wafer-shaped InAs and InSb.
An experimental method is introduced to measure the refractive index and its temperature dependence for wafer-shaped infrared materials over a continuous temperature range. Using a combination of Michelson interferometry, Fabry-Perot interferometry, and a temperature-controlled cryostat in a laser micrometer, refractive index values and their temperature coefficients can be measured for any spe...
متن کاملRoom temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics
Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current-voltage curve, based on the metal-semiconductor-meta...
متن کاملHigh sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire
Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal-semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm-3 and an electron mobility of 215.25 cm2 V-1 s-1. The photodetectors exhi...
متن کامل